Invention Grant
- Patent Title: MRAM cell having shared configuration
- Patent Title (中): 具有共享配置的MRAM单元
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Application No.: US11053379Application Date: 2005-02-08
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Publication No.: US07221584B2Publication Date: 2007-05-22
- Inventor: Chi-Wen Liu , Kuo-Ching Chiang , Horng-Huei Tseng , Denny D. Tang
- Applicant: Chi-Wen Liu , Kuo-Ching Chiang , Horng-Huei Tseng , Denny D. Tang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119

Abstract:
A magnetic memory includes two first magnetic layers each oriented over a substrate, a second magnetic layer interposing the two first magnetic layers, and two dielectric layers each contacting the second magnetic layer and interposing the second magnetic layer and one of the two first magnetic layers. Each of the first and second magnetic layers and the dielectric layers may be oriented substantially perpendicular to the substrate or at an acute angle relative to the substrate.
Public/Granted literature
- US20060033133A1 MRAM cell having shared configuration Public/Granted day:2006-02-16
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