Invention Grant
US07221584B2 MRAM cell having shared configuration 有权
具有共享配置的MRAM单元

MRAM cell having shared configuration
Abstract:
A magnetic memory includes two first magnetic layers each oriented over a substrate, a second magnetic layer interposing the two first magnetic layers, and two dielectric layers each contacting the second magnetic layer and interposing the second magnetic layer and one of the two first magnetic layers. Each of the first and second magnetic layers and the dielectric layers may be oriented substantially perpendicular to the substrate or at an acute angle relative to the substrate.
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