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    MRAM cell having shared configuration
    1.
    发明授权
    MRAM cell having shared configuration 有权
    具有共享配置的MRAM单元

    公开(公告)号：US07221584B2

    公开(公告)日：2007-05-22

    申请号：US11053379

    申请日：2005-02-08

    申请人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny D. Tang

    发明人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny D. Tang

    IPC分类号： G11C11/00 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L27/228

    摘要： A magnetic memory includes two first magnetic layers each oriented over a substrate, a second magnetic layer interposing the two first magnetic layers, and two dielectric layers each contacting the second magnetic layer and interposing the second magnetic layer and one of the two first magnetic layers. Each of the first and second magnetic layers and the dielectric layers may be oriented substantially perpendicular to the substrate or at an acute angle relative to the substrate.

    摘要翻译： 磁存储器包括两个分别定向在衬底上的第一磁性层，插入两个第一磁性层的第二磁性层和与第二磁性层接触并插入第二磁性层和两个第一磁性层之一的两个电介质层。 第一和第二磁性层和电介质层中的每一个可以基本上垂直于衬底取向或相对于衬底成锐角。

    MRAM over sloped pillar
    2.
    发明授权
    MRAM over sloped pillar 有权
    MRAM倾斜柱

    公开(公告)号：US07319262B2

    公开(公告)日：2008-01-15

    申请号：US10917585

    申请日：2004-08-13

    申请人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny D. Tang

    发明人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny D. Tang

    IPC分类号： H01L29/82 ,  H01L43/00 ,  H01L21/00

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/15 ,  H01L27/228

    摘要： An apparatus including a pillar located over a substrate and having at least one sloped surface oriented at an acute angle relative to the substrate. The apparatus also includes an MRAM stack substantially conforming to the sloped surface, the MRAM stack thereby also oriented at the acute angle relative to the substrate. The MRAM stack may comprise a plurality of substantially planar, parallel layers each oriented at an acute angle relative to the substrate.

    摘要翻译： 一种装置，包括位于衬底上方的柱，并且具有相对于衬底以锐角定向的至少一个倾斜表面。 该装置还包括基本上符合倾斜表面的MRAM堆叠，因此MRAM堆叠也相对于衬底以锐角取向。 MRAM堆叠可以包括多个基本上平面的平行层，每个平行层相对于衬底以锐角取向。

    MRAM cell having shared configuration
    4.
    发明申请
    MRAM cell having shared configuration 有权
    具有共享配置的MRAM单元

    公开(公告)号：US20060033133A1

    公开(公告)日：2006-02-16

    申请号：US11053379

    申请日：2005-02-08

    申请人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny Tang

    发明人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny Tang

    IPC分类号： H01L29/94

    CPC分类号： H01L27/228

    摘要： A magnetic memory includes two first magnetic layers each oriented over a substrate, a second magnetic layer interposing the two first magnetic layers, and two dielectric layers each contacting the second magnetic layer and interposing the second magnetic layer and one of the two first magnetic layers. Each of the first and second magnetic layers and the dielectric layers may be oriented substantially perpendicular to the substrate or at an acute angle relative to the substrate.

    摘要翻译： 磁存储器包括两个分别定向在衬底上的第一磁性层，插入两个第一磁性层的第二磁性层和与第二磁性层接触并插入第二磁性层和两个第一磁性层之一的两个电介质层。 第一和第二磁性层和电介质层中的每一个可以基本上垂直于衬底取向或相对于衬底成锐角。

    MRAM over sloped pillar
    6.
    发明申请
    MRAM over sloped pillar 有权
    MRAM倾斜柱

    公开(公告)号：US20060033136A1

    公开(公告)日：2006-02-16

    申请号：US10917585

    申请日：2004-08-13

    申请人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny Tang

    发明人： Chi-Wen Liu ,  Kuo-Ching Chiang ,  Horng-Huei Tseng ,  Denny Tang

    IPC分类号： G11C11/15 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/15 ,  H01L27/228

    摘要： An apparatus including a pillar located over a substrate and having at least one sloped surface oriented at an acute angle relative to the substrate. The apparatus also includes an MRAM stack substantially conforming to the sloped surface, the MRAM stack thereby also oriented at the acute angle relative to the substrate. The MRAM stack may comprise a plurality of substantially planar, parallel layers each oriented at an acute angle relative to the substrate.

    摘要翻译： 一种装置，包括位于衬底上方的柱，并且具有相对于衬底以锐角定向的至少一个倾斜表面。 该装置还包括基本上符合倾斜表面的MRAM堆叠，因此MRAM堆叠也相对于衬底以锐角取向。 MRAM堆叠可以包括多个基本上平面的平行层，每个平行层相对于衬底以锐角取向。

    Effectively water-free immersion lithography
    7.
    发明申请
    Effectively water-free immersion lithography 审中-公开
    有效无水浸渍光刻

    公开(公告)号：US20060046211A1

    公开(公告)日：2006-03-02

    申请号：US10928455

    申请日：2004-08-27

    申请人： Chi-Wen Liu ,  Horng-Huei Tseng ,  Chin-Hsiang Lin

    发明人： Chi-Wen Liu ,  Horng-Huei Tseng ,  Chin-Hsiang Lin

    IPC分类号： G03B27/52 ,  G03F7/20

    CPC分类号： G03F7/70341

    摘要： A method and system is disclosed for conducting immersion photolithography. The system includes at least one lens for transmitting a predetermined radiation on a predetermined substrate with a distance between the lens and the substrate shorter than a predetermined threshold, and a fluid volume in contact with the lens on its first end, and with the substrate on its second end, wherein the fluid volume is an effectively water-free fluid.

    摘要翻译： 公开了用于进行浸没光刻的方法和系统。 该系统包括至少一个透镜，用于在预定基板上传输预定辐射，透镜和衬底之间的距离小于预定阈值，以及在其第一端上与透镜接触的流体体积，并且衬底在 其第二端，其中流体体积是有效的无水流体。

    Multi-fin device and method of making same
    9.
    发明授权
    Multi-fin device and method of making same 有权
    多翅片装置及其制造方法

    公开(公告)号：US09287385B2

    公开(公告)日：2016-03-15

    申请号：US13223682

    申请日：2011-09-01

    申请人： Chi-Wen Liu ,  Chao-Hsiung Wang

    发明人： Chi-Wen Liu ,  Chao-Hsiung Wang

    IPC分类号： H01L29/788 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/088

    CPC分类号： H01L27/0886 ,  H01L21/823431 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/20 ,  H01L29/22 ,  H01L29/66795

    摘要： A multiple-fin device includes a substrate and a plurality of fins formed on the substrate. Source and drain regions are formed in the respective fins. A dielectric layer is formed on the substrate. The dielectric layer has a first thickness adjacent one side of a first fin and having a second thickness, different from the first thickness, adjacent an opposite side of the fin. A continuous gate structure is formed overlying the plurality of fins, the continuous gate structure being adjacent a top surface of each fin and at least one sidewall surface of at least one fin. By adjusting the dielectric layer thickness, channel width of the resulting device can be fine-tuned.

    摘要翻译： 多翅片装置包括基板和形成在基板上的多个翅片。 源极和漏极区域形成在相应的鳍片中。 在基板上形成电介质层。 电介质层具有与第一鳍片的一侧相邻的第一厚度，并且具有与第一厚度不同的第二厚度，邻近鳍片的相对侧。 连续的栅极结构被形成为覆盖多个翅片，连续栅极结构邻近每个翅片的顶表面和至少一个翅片的至少一个侧壁表面。 通过调整电介质层的厚度，所得到的器件的通道宽度可以被微调。

    FinFET device and method of manufacturing same
    10.
    发明授权
    FinFET device and method of manufacturing same 有权

    公开(公告)号：US08723236B2

    公开(公告)日：2014-05-13

    申请号：US13272305

    申请日：2011-10-13

    申请人： Chi-Wen Liu ,  Chao-Hsiung Wang

    发明人： Chi-Wen Liu ,  Chao-Hsiung Wang

    IPC分类号： H01L29/772 ,  H01L21/336

    CPC分类号： H01L29/66795 ,  H01L21/76224 ,  H01L29/7843 ,  H01L29/7845 ,  H01L29/785

    摘要： A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a fin structure including one or more fins disposed on the substrate. The semiconductor device further includes a dielectric layer disposed on a central portion of the fin structure and traversing each of the one or more fins. The semiconductor device further includes a work function metal disposed on the dielectric layer and traversing each of the one or more fins. The semiconductor device further includes a strained material disposed on the work function metal and interposed between each of the one or more fins. The semiconductor device further includes a signal metal disposed on the work function metal and on the strained material and traversing each of the one or more fins.