发明授权
US07227189B2 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
有权
氮化物半导体和氮化物半导体器件的气相生长方法
- 专利标题: Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
- 专利标题(中): 氮化物半导体和氮化物半导体器件的气相生长方法
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申请号: US10868313申请日: 2004-06-15
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公开(公告)号: US07227189B2公开(公告)日: 2007-06-05
- 发明人: Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
- 申请人: Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Bell, Boyd & Lloyd LLP
- 优先权: JPP2001-120615 20010419
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crystal growth rate, the supply of crystal growth source material and/or the crystal growth area can be varied over time, thus resulting in a nitride semiconductor device with enhanced properties.
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