发明授权
US07227189B2 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device 有权
氮化物半导体和氮化物半导体器件的气相生长方法

Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
摘要:
Nitride semiconductor devices and methods of producing same are provided. The present invention includes forming a nitride semiconductor layer on a base body of the nitride semiconductor under selective and controlled crystal growth conditions. For example, the crystal growth rate, the supply of crystal growth source material and/or the crystal growth area can be varied over time, thus resulting in a nitride semiconductor device with enhanced properties.
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