Integrated circuit capacitor structure

Invention Grant

US07229875B2 Integrated circuit capacitor structure 失效

Title translation: 集成电路电容器结构

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Patent Title: Integrated circuit capacitor structure
Patent Title (中): 集成电路电容器结构
Application No.: US10688077

Application Date: 2003-10-16
Publication No.: US07229875B2

Publication Date: 2007-06-12
Inventor: Kyoung-woo Lee , Wan-jae Park , Jeong-hoon Ahn , Kyung-tae Lee , Mu-kyeng Jung , Yong-jun Lee , Il-goo Kim , Soo-geun Lee
Applicant: Kyoung-woo Lee , Wan-jae Park , Jeong-hoon Ahn , Kyung-tae Lee , Mu-kyeng Jung , Yong-jun Lee , Il-goo Kim , Soo-geun Lee
Applicant Address: KR Suwon-si, Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Suwon-si, Gyeonggi-do
Agency: Marger Johnson & McCollom, P.C.
Priority: KR10-2002-0063477 20021017; KR10-2003-0003296 20030117
Main IPC: H01L21/8234
IPC: H01L21/8234

Abstract:

Embodiments of the invention include a MIM capacitor having a high capacitance with improved manufacturability. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.

Abstract(Chinese):

本发明的实施例包括具有高电容且具有改进的可制造性的MIM电容器。这种电容器包括上电极，下电极和位于上电极和下电极之间的电介质层。可以将第一电压施加到上电极，并且可以将不同于第一电压的第二电压施加到下电极。将第一电压施加到上电极的线层位于与下电极相同的水平或比下电极低的水平位置。

Public/Granted literature

US20040137694A1 Integrated circuit capacitor structure Public/Granted day:2004-07-15

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺