公开(公告)号：US20070184610A1

公开(公告)日：2007-08-09

申请号：US11733711

申请日：2007-04-10

申请人： Kyoung-woo Lee ,  Wan-jae Park ,  Jeong-hoon Ahn ,  Kyung-tae Lee ,  Mu-kyeng Jung ,  Yong-jun Lee ,  Il-goo Kim ,  Soo-geun Lee

发明人： Kyoung-woo Lee ,  Wan-jae Park ,  Jeong-hoon Ahn ,  Kyung-tae Lee ,  Mu-kyeng Jung ,  Yong-jun Lee ,  Il-goo Kim ,  Soo-geun Lee

IPC分类号： H01L21/8242 ,  H01L21/20

CPC分类号： H01L28/40 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.

公开(公告)号：US07229875B2

公开(公告)日：2007-06-12

申请号：US10688077

申请日：2003-10-16

申请人： Kyoung-woo Lee ,  Wan-jae Park ,  Jeong-hoon Ahn ,  Kyung-tae Lee ,  Mu-kyeng Jung ,  Yong-jun Lee ,  Il-goo Kim ,  Soo-geun Lee

发明人： Kyoung-woo Lee ,  Wan-jae Park ,  Jeong-hoon Ahn ,  Kyung-tae Lee ,  Mu-kyeng Jung ,  Yong-jun Lee ,  Il-goo Kim ,  Soo-geun Lee

IPC分类号： H01L21/8234

CPC分类号： H01L28/40 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention include a MIM capacitor having a high capacitance with improved manufacturability. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.

摘要翻译： 本发明的实施例包括具有高电容且具有改进的可制造性的MIM电容器。 这种电容器包括上电极，下电极和位于上电极和下电极之间的电介质层。 可以将第一电压施加到上电极，并且可以将不同于第一电压的第二电压施加到下电极。 将第一电压施加到上电极的线层位于与下电极相同的水平或比下电极低的水平位置。

公开(公告)号：US20050029010A1

公开(公告)日：2005-02-10

申请号：US10891062

申请日：2004-07-15

申请人： Jeong-hoon Ahn ,  Hyo-jong Lee ,  Kyung-tae Lee ,  Kyoung-woo Lee ,  Soo-geun Lee ,  Bong-seok Suh

发明人： Jeong-hoon Ahn ,  Hyo-jong Lee ,  Kyung-tae Lee ,  Kyoung-woo Lee ,  Soo-geun Lee ,  Bong-seok Suh

IPC分类号： H01L21/768 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/4763 ,  H01L23/52 ,  H05K1/11

CPC分类号： H01L21/76877 ,  H01L21/76847

摘要： A metal interconnection structure includes a lower metal interconnection layer disposed in a first inter-layer dielectric layer. An inter-metal dielectric layer having a via contact hole that exposes a portion of surface of the lower metal layer pattern is disposed on the first inter-layer dielectric layer and the lower metal layer pattern. A second inter-layer dielectric layer having a trench that exposes the via contact hole is formed on the inter-metal dielectric layer. A barrier metal layer is formed on a vertical surface of the via contact and the exposed surface of the second lower metal interconnection layer pattern. A first upper metal interconnection layer pattern is disposed on the barrier metal layer, thereby filling the via contact hole and a portion of the trench. A void diffusion barrier layer is disposed on the first metal interconnection layer pattern and a second upper metal interconnection layer pattern is disposed on the void diffusion barrier layer to completely fill the trench.

摘要翻译： 金属互连结构包括设置在第一层间电介质层中的下金属互连层。 具有暴露下部金属层图案的一部分表面的通孔接触孔的金属间介电层设置在第一层间电介质层和下部金属层图案上。 在金属间电介质层上形成具有暴露通孔接触孔的沟槽的第二层间电介质层。 在通孔接触件的垂直表面和第二下部金属互连层图案的暴露表面上形成阻挡金属层。 第一上金属互连层图案设置在阻挡金属层上，从而填充通孔接触孔和沟槽的一部分。 空隙扩散阻挡层设置在第一金属互连层图案上，并且第二上金属互连层图案设置在空隙扩散阻挡层上以完全填充沟槽。

公开(公告)号：US06953745B2

公开(公告)日：2005-10-11

申请号：US10891062

申请日：2004-07-15

申请人： Jeong-hoon Ahn ,  Hyo-jong Lee ,  Kyung-tae Lee ,  Kyoung-woo Lee ,  Soo-geun Lee ,  Bong-seok Suh

发明人： Jeong-hoon Ahn ,  Hyo-jong Lee ,  Kyung-tae Lee ,  Kyoung-woo Lee ,  Soo-geun Lee ,  Bong-seok Suh

IPC分类号： H01L21/768 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/4763 ,  H01L23/52 ,  H05K1/11

CPC分类号： H01L21/76877 ,  H01L21/76847

摘要： A metal interconnection structure includes a lower metal interconnection layer disposed in a first inter-layer dielectric layer. An inter-metal dielectric layer having a via contact hole that exposes a portion of surface of the lower metal layer pattern is disposed on the first inter-layer dielectric layer and the lower metal layer pattern. A second inter-layer dielectric layer having a trench that exposes the via contact hole is formed on the inter-metal dielectric layer. A barrier metal layer is formed on a vertical surface of the via contact and the exposed surface of the second lower metal interconnection layer pattern. A first upper metal interconnection layer pattern is disposed on the barrier metal layer, thereby filling the via contact hole and a portion of the trench. A void diffusion barrier layer is disposed on the first metal interconnection layer pattern and a second upper metal interconnection layer pattern is disposed on the void diffusion barrier layer to completely fill the trench.

摘要翻译： 金属互连结构包括设置在第一层间电介质层中的下金属互连层。 具有暴露下部金属层图案的一部分表面的通孔接触孔的金属间介电层设置在第一层间电介质层和下部金属层图案上。 在金属间电介质层上形成具有暴露通孔接触孔的沟槽的第二层间电介质层。 在通孔接触件的垂直表面和第二下部金属互连层图案的暴露表面上形成阻挡金属层。 第一上金属互连层图案设置在阻挡金属层上，从而填充通孔接触孔和沟槽的一部分。 空隙扩散阻挡层设置在第一金属互连层图案上，并且第二上金属互连层图案设置在空隙扩散阻挡层上以完全填充沟槽。