- 专利标题: Method for forming an improved low power SRAM contact
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申请号: US10871102申请日: 2004-06-16
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公开(公告)号: US07232762B2公开(公告)日: 2007-06-19
- 发明人: Chia-Der Chang , Yu-Ching Chang , Chien-Chih Chou , Yi-Tung Yen
- 申请人: Chia-Der Chang , Yu-Ching Chang , Chien-Chih Chou , Yi-Tung Yen
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Tung & Associates
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
A method of forming contact openings in a semiconductor device including providing a semiconducting substrate; forming an etch stop layer on said semiconducting substrate; forming a dielectric layer on said etch stop layer; forming a bottom anti-reflective coating (BARC) on said dielectric layer; forming and patterning a mask on said BARC layer; and, forming at least a first contact opening exposing said etch stop layer by a first etching process.
公开/授权文献
- US20050282395A1 Method for forming an improved low power SRAM contact 公开/授权日:2005-12-22