发明授权
- 专利标题: Method for fabricating microchips using metal oxide masks
- 专利标题(中): 使用金属氧化物掩模制造微芯片的方法
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申请号: US11040091申请日: 2005-01-24
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公开(公告)号: US07268037B2公开(公告)日: 2007-09-11
- 发明人: Stefan Jakschik , Thomas Hecht , Uwe Schröder , Matthias Goldbach
- 申请人: Stefan Jakschik , Thomas Hecht , Uwe Schröder , Matthias Goldbach
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies, AG
- 当前专利权人: Infineon Technologies, AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Edell, Shapiro & Finnan, LLC
- 优先权: DE10234734 20020730
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242
摘要:
A process for modifying sections of a semiconductor includes covering the sections to remain free of doping with a metal oxide, e.g., aluminum oxide. Then, the semiconductor is doped, for example, from the gas phase, in those sections that are not covered by the aluminum oxide. Finally, the aluminum oxide is selectively removed again, for example using hot phosphoric acid. Sections of the semiconductor surface which are formed from silicon, silicon oxide or silicon nitride remain in place on the wafer.