发明授权
US07298013B2 Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure
有权
用于形成自组装单层,层结构,具有层结构的半导体组分的化合物和用于制备层结构的方法
- 专利标题: Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure
- 专利标题(中): 用于形成自组装单层,层结构,具有层结构的半导体组分的化合物和用于制备层结构的方法
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申请号: US11313250申请日: 2005-12-20
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公开(公告)号: US07298013B2公开(公告)日: 2007-11-20
- 发明人: Guenter Schmid , Marcus Halik , Hagen Klauk , Ute Zschieschang , Franz Effenberger , Markus Schutz , Steffen Maisch , Steffen Seifritz , Frank Buckel
- 申请人: Guenter Schmid , Marcus Halik , Hagen Klauk , Ute Zschieschang , Franz Effenberger , Markus Schutz , Steffen Maisch , Steffen Seifritz , Frank Buckel
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Slater & Matsil, L.L.P.
- 优先权: DE10328811 20030620
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group. The molecular group is capable of π-π interactions, which stabilize the monolayer. In an embodiment, the semiconductor component is an organic field effect transistor (OFET). In an embodiment of the invention, a method includes forming the monolayer using a liquid phase immersion process.
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