发明授权
US07307002B2 Non-critical complementary masking method for poly-1 definition in flash memory device fabrication
有权
闪存器件制造中poly-1定义的非关键互补掩模方法
- 专利标题： Non-critical complementary masking method for poly-1 definition in flash memory device fabrication
- 专利标题（中）： 闪存器件制造中poly-1定义的非关键互补掩模方法
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申请号： US11099339申请日： 2005-04-04
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公开(公告)号： US07307002B2公开(公告)日： 2007-12-11
- 发明人: Unsoon Kim , Hiroyuki Kinoshita , Yu Sun , Krishnashree Achuthan , Christopher H. Raeder , Christopher M. Foster , Harpreet Kaur Sachar , Kashmir Singh Sahota
- 申请人： Unsoon Kim , Hiroyuki Kinoshita , Yu Sun , Krishnashree Achuthan , Christopher H. Raeder , Christopher M. Foster , Harpreet Kaur Sachar , Kashmir Singh Sahota
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A method is disclosed for the definition of the poly-1 layer in a semiconductor wafer. A non-critical mask is used to recess field oxides in the periphery prior to poly-1 deposition by an amount equal to the final poly-1 thickness. A complimentary non-critical mask is used to permit CMP of the core to expose the tops of core oxide mesas from the shallow isolation trenches.
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