发明授权
- 专利标题： Group III nitride based superlattice structures
- 专利标题（中）： III族氮化物超晶格结构
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申请号： US10963666申请日： 2004-10-13
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公开(公告)号： US07312474B2公开(公告)日： 2007-12-25
- 发明人: David Todd Emerson , James Ibbetson , Michael John Bergmann , Kathleen Marie Doverspike , Michael John O'Loughlin , Howard Dean Nordby, Jr. , Amber Christine Abare
- 申请人： David Todd Emerson , James Ibbetson , Michael John Bergmann , Kathleen Marie Doverspike , Michael John O'Loughlin , Howard Dean Nordby, Jr. , Amber Christine Abare
- 申请人地址： US NC Durham
- 专利权人： Cree, Inc.
- 当前专利权人： Cree, Inc.
- 当前专利权人地址： US NC Durham
- 代理机构： Myers Bigel Sibley & Sajovec, PA
- 主分类号： H01L29/221
- IPC分类号： H01L29/221
摘要：
A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X
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