公开(公告)号：US06958497B2

公开(公告)日：2005-10-25

申请号：US10140796

申请日：2002-05-07

申请人： David Todd Emerson ,  James Ibbetson ,  Michael John Bergmann ,  Kathleen Marie Doverspike ,  Michael John O'Loughlin ,  Howard Dean Nordby, Jr. ,  Amber Christine Abare

发明人： David Todd Emerson ,  James Ibbetson ,  Michael John Bergmann ,  Kathleen Marie Doverspike ,  Michael John O'Loughlin ,  Howard Dean Nordby, Jr. ,  Amber Christine Abare

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L29/22

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−XN and InYGa1−YN, where 0≦X

摘要翻译： 在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。 有源区具有至少一个量子阱结构。 量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。 提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。 量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。 还提供了一种III族氮化物基半导体器件，其包括具有至少两个交替层的In 1 N 1 Ga 1-X N和In 1 N的纳米氮基超晶格， SUB> Y 1-Y N，其中0 <= X <1且0 <= Y <1，X不等于Y.该半导体器件可以是发光 二极管与III族氮化物基活性区。 有源区可以是多量子阱有源区。

公开(公告)号：US09112083B2

公开(公告)日：2015-08-18

申请号：US13535026

申请日：2012-06-27

申请人： David Todd Emerson ,  James Ibbetson ,  Michael John Bergmann ,  Kathleen Marie Doverspike ,  Michael John O'Loughlin ,  Howard Dean Nordby, Jr. ,  Amber Christine Abare

发明人： David Todd Emerson ,  James Ibbetson ,  Michael John Bergmann ,  Kathleen Marie Doverspike ,  Michael John O'Loughlin ,  Howard Dean Nordby, Jr. ,  Amber Christine Abare

IPC分类号： H01L31/072 ,  H01L33/06 ,  H01L21/02 ,  H01L33/32 ,  B82Y20/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

摘要： A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X

摘要翻译： 提供了一种半导体器件，其包括基于III族氮化物的超晶格和在该超晶格上包含至少一个量子阱结构的基于III族氮化物的有源区。 量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。 还提供了一种III族氮化物基半导体器件，其包括具有InXGa1-XN和InYGa1-YN的交替层的至少两个周期的氮化镓基超晶格，其中0＆nlE; X <1且0＆lt; nlE; Y <1且X不是 等于Y.半导体器件可以是具有III族氮化物的有源区的发光二极管。 有源区可以是多量子阱有源区。

公开(公告)号：US08227268B2

公开(公告)日：2012-07-24

申请号：US11875353

申请日：2007-10-19

申请人： David Todd Emerson ,  James Ibbetson ,  Michael John Bergmann ,  Kathleen Marie Doverspike ,  Michael John O'Loughlin ,  Howard Dean Nordby, Jr. ,  Amber Christine Abare

发明人： David Todd Emerson ,  James Ibbetson ,  Michael John Bergmann ,  Kathleen Marie Doverspike ,  Michael John O'Loughlin ,  Howard Dean Nordby, Jr. ,  Amber Christine Abare

IPC分类号： H01L21/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well stricture. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X

摘要翻译： 在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。 有源区具有至少一个量子阱狭窄。 量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。 提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。 量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。 还提供了一种III族氮化物基半导体器件，其包括具有InXGa1-XN和InYGa1-YN的交替层的至少两个周期的氮化镓基超晶格，其中0＆nlE; X <1且0＆lt; nlE; Y <1且X不是 等于Y.半导体器件可以是具有III族氮化物的有源区的发光二极管。 有源区可以是多量子阱有源区。

公开(公告)号：US07312474B2

公开(公告)日：2007-12-25

申请号：US10963666

申请日：2004-10-13

申请人： David Todd Emerson ,  James Ibbetson ,  Michael John Bergmann ,  Kathleen Marie Doverspike ,  Michael John O'Loughlin ,  Howard Dean Nordby, Jr. ,  Amber Christine Abare

发明人： David Todd Emerson ,  James Ibbetson ,  Michael John Bergmann ,  Kathleen Marie Doverspike ,  Michael John O'Loughlin ,  Howard Dean Nordby, Jr. ,  Amber Christine Abare

IPC分类号： H01L29/221

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0≦X

摘要翻译： 在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。 有源区具有至少一个量子阱结构。 量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。 提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。 量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。 还提供了一种III族氮化物基半导体器件，其包括具有至少两个交替层的In 1 N 1 Ga 1-X N和In 1 N的纳米氮基超晶格， SUB> Y 1-Y N，其中0 <= X <1且0 <= Y <1，X不等于Y.该半导体器件可以是发光 二极管与III族氮化物基活性区。 有源区可以是多量子阱有源区。