发明授权
US07314830B2 Method of fabricating semiconductor integrated circuit device with 99.99 wt% cobalt
有权
制造具有99.99重量%钴的半导体集成电路器件的方法
- 专利标题: Method of fabricating semiconductor integrated circuit device with 99.99 wt% cobalt
- 专利标题(中): 制造具有99.99重量%钴的半导体集成电路器件的方法
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申请号: US11783187申请日: 2007-04-06
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公开(公告)号: US07314830B2公开(公告)日: 2008-01-01
- 发明人: Shinji Nishihara , Shuji Ikeda , Naotaka Hashimoto , Hiroshi Momiji , Hiromi Abe , Shinichi Fukada , Masayuki Suzuki
- 申请人: Shinji Nishihara , Shuji Ikeda , Naotaka Hashimoto , Hiroshi Momiji , Hiromi Abe , Shinichi Fukada , Masayuki Suzuki
- 申请人地址: JP Tokyo
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.