发明授权
- 专利标题: Method for forming recesses
- 专利标题(中): 凹槽形成方法
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申请号: US11195294申请日: 2005-08-02
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公开(公告)号: US07316978B2公开(公告)日: 2008-01-08
- 发明人: Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
- 申请人: Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
- 申请人地址: TW Taoyuan
- 专利权人: Nanya Technology Corporation
- 当前专利权人: Nanya Technology Corporation
- 当前专利权人地址: TW Taoyuan
- 代理机构: Quintero Law Office
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
A method for forming a recess. The method includes providing a substrate with two protrusions having a first side wall and a second side wall opposite to the first side wall disposed above the substrate, conformally forming a mask layer on the substrate and the protrusions, tilt implanting the mask layer using a first implanting mask adjacent to the first side wall of the protrusions, removing implanted portions of the mask layer to form a patterned mask layer, and etching the substrate using the patterned mask layer, thereby forming a recess.
公开/授权文献
- US20070032038A1 Method for forming recesses 公开/授权日:2007-02-08