Invention Grant
US07319255B2 Semiconductor device including a metal gate electrode formed in a trench and method of forming thereof
失效
包括形成在沟槽中的金属栅电极的半导体器件及其形成方法
- Patent Title: Semiconductor device including a metal gate electrode formed in a trench and method of forming thereof
- Patent Title (中): 包括形成在沟槽中的金属栅电极的半导体器件及其形成方法
-
Application No.: US11138034Application Date: 2005-05-26
-
Publication No.: US07319255B2Publication Date: 2008-01-15
- Inventor: Sung-Wook Hwang , Chang-Jin Kang , Kyeong-Koo Chi , Sung-Hoon Chung
- Applicant: Sung-Wook Hwang , Chang-Jin Kang , Kyeong-Koo Chi , Sung-Hoon Chung
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2004-0042613 20040610
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L21/28
Abstract:
A semiconductor device including a transistor and a method of forming thereof are provided. The semiconductor device comprises a metal gate electrode. A lower portion of the metal gate electrode fills a channel trench formed at a predetermined region of a substrate, and an upper portion of the metal gate electrode protrudes on the substrate. A gate insulating layer is interposed between inner sidewalls and a bottom surface of the channel trench, and the metal gate electrode. Source/drain regions are formed at the substrate in both sides of the metal gate electrode.
Public/Granted literature
- US20050275042A1 Semiconductor device including a field effect transistor and method of forming thereof Public/Granted day:2005-12-15
Information query
IPC分类:
