发明授权
- 专利标题： Method of forming a controlled and uniform lightly phosphorous doped silicon film
- 专利标题（中）： 形成受控均匀的轻掺磷硅膜的方法
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申请号： US11229224申请日： 2005-09-16
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公开(公告)号： US07335266B2公开(公告)日： 2008-02-26
- 发明人: Li Fu , Sheeba J. Panayil , Shulin Wang , Christopher G. Quentin , Lee Luo , Aihua Chen , Xianzhi Tao
- 申请人： Li Fu , Sheeba J. Panayil , Shulin Wang , Christopher G. Quentin , Lee Luo , Aihua Chen , Xianzhi Tao
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely Sokoloff Taylor & Zafman
- 主分类号： C23C16/52
- IPC分类号： C23C16/52 ; C23C16/00 ; G06F19/00 ; C23C16/22 ; C23C16/24
摘要：
Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.
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