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1.发明授权公开(公告)号：US06982214B2
公开(公告)日：2006-01-03
申请号：US10263105
申请日：2002-10-01
申请人： Li Fu , Sheeba J. Panayil , Shulin Wang , Christopher G. Quentin , Lee Luo , Aihua Chen , Xianzhi Tao
发明人： Li Fu , Sheeba J. Panayil , Shulin Wang , Christopher G. Quentin , Lee Luo , Aihua Chen , Xianzhi Tao
IPC分类号： H01L21/20
CPC分类号： C23C16/24 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.
摘要翻译： 形成轻掺磷硅膜的方法。 提供基板。 使用包含磷源气体和乙硅烷气体的工艺气体在衬底上形成轻掺磷硅膜。 稀释的磷源气体的磷浓度为1％。 磷源气体和乙硅烷气体的流量比小于1:100。 轻掺磷硅膜的磷掺杂浓度小于1×10 20原子/ cm 3。
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2.发明授权公开(公告)号：US07335266B2
公开(公告)日：2008-02-26
申请号：US11229224
申请日：2005-09-16
申请人： Li Fu , Sheeba J. Panayil , Shulin Wang , Christopher G. Quentin , Lee Luo , Aihua Chen , Xianzhi Tao
发明人： Li Fu , Sheeba J. Panayil , Shulin Wang , Christopher G. Quentin , Lee Luo , Aihua Chen , Xianzhi Tao
CPC分类号： C23C16/24 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.
摘要翻译： 形成轻掺磷硅膜的方法。 提供基板。 使用包含磷源气体和乙硅烷气体的工艺气体在衬底上形成轻掺磷硅膜。 稀释的磷源气体的磷浓度为1％。 磷源气体和乙硅烷气体的流量比小于1:100。 轻掺磷硅膜的磷掺杂浓度小于1×10 20原子/ cm 3。
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