发明授权
US07342268B2 CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom
有权
具有Cu布线的CMOS成像器和从其中消除高反射率界面的方法
- 专利标题: CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom
- 专利标题(中): 具有Cu布线的CMOS成像器和从其中消除高反射率界面的方法
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申请号: US10905277申请日: 2004-12-23
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公开(公告)号: US07342268B2公开(公告)日: 2008-03-11
- 发明人: James W. Adkisson , Jeffrey P. Gambino , Mark D. Jaffe , Robert K. Leidy , Richard J. Rassel , Anthony K. Stamper
- 申请人: James W. Adkisson , Jeffrey P. Gambino , Mark D. Jaffe , Robert K. Leidy , Richard J. Rassel , Anthony K. Stamper
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 William D. Sabo, Esq.
- 主分类号: H01L31/062
- IPC分类号: H01L31/062
摘要:
An image sensor and method of fabrication wherein the sensor includes Copper (Cu) metallization levels allowing for incorporation of a thinner interlevel dielectric stack to result in a pixel array exhibiting increased light sensitivity. The image sensor includes structures having a minimum thickness of barrier layer metal that traverses the optical path of each pixel in the sensor array or, that have portions of barrier layer metal selectively removed from the optical paths of each pixel, thereby minimizing reflectance. That is, by implementing various block or single mask methodologies, portions of the barrier layer metal are completely removed at locations of the optical path for each pixel in the array. In a further embodiment, the barrier metal layer may be formed atop the Cu metallization by a self-aligned deposition.
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