发明授权
US07342290B2 Semiconductor metal contamination reduction for ultra-thin gate dielectrics
失效
用于超薄栅极电介质的半导体金属污染减少
- 专利标题： Semiconductor metal contamination reduction for ultra-thin gate dielectrics
- 专利标题（中）： 用于超薄栅极电介质的半导体金属污染减少
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申请号： US10981232申请日： 2004-11-04
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公开(公告)号： US07342290B2公开(公告)日： 2008-03-11
- 发明人: Jay S. Burnham , James R. Elliott , Kenneth R. Gault , Mousa H. Ishaq , Steven M. Shank , Mary A. St. Lawrence
- 申请人： Jay S. Burnham , James R. Elliott , Kenneth R. Gault , Mousa H. Ishaq , Steven M. Shank , Mary A. St. Lawrence
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 William D. Sabo, Esq.
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/00
摘要：
A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.
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