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1.发明授权公开(公告)号：US07342290B2
公开(公告)日：2008-03-11
申请号：US10981232
申请日：2004-11-04
申请人： Jay S. Burnham , James R. Elliott , Kenneth R. Gault , Mousa H. Ishaq , Steven M. Shank , Mary A. St. Lawrence
发明人： Jay S. Burnham , James R. Elliott , Kenneth R. Gault , Mousa H. Ishaq , Steven M. Shank , Mary A. St. Lawrence
CPC分类号： H01L21/28194 , H01L21/02046 , H01L21/28202 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/518 , Y10S257/913
摘要： A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.
摘要翻译： 提供了用于大大减少或消除随后的多晶硅沉积期间形成的金属污染物的双层电介质结构。 双层电介质结构包括位于底表面区域顶部富含氯的上表面区域。 富含氯的上表面区域除去在随后形成多晶硅层期间存在于结构顶部的金属污染物。 还提供了形成双层结构的方法。
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2.发明授权Bilayer ultra-thin gate dielectric and process for semiconductor metal contamination reduction 失效双层超薄栅极电介质和工艺，用于半导体金属污染的降低公开(公告)号：US06838396B2
公开(公告)日：2005-01-04
申请号：US10249292
申请日：2003-03-28
申请人： Jay S. Burnham , James R. Elliott , Kenneth R. Gault , Mousa H. Ishaq , Steven M. Shank , Mary A. St. Lawrence
发明人： Jay S. Burnham , James R. Elliott , Kenneth R. Gault , Mousa H. Ishaq , Steven M. Shank , Mary A. St. Lawrence
IPC分类号： H01L21/28 , H01L21/306 , H01L21/8238 , H01L29/51 , H01L21/31 , H01L21/469
CPC分类号： H01L21/28194 , H01L21/02046 , H01L21/28202 , H01L21/823857 , H01L29/513 , H01L29/517 , H01L29/518 , Y10S257/913
摘要： A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.
摘要翻译： 提供了用于大大减少或消除随后的多晶硅沉积期间形成的金属污染物的双层电介质结构。 双层电介质结构包括位于底表面区域顶部富含氯的上表面区域。 富含氯的上表面区域除去在随后形成多晶硅层期间存在于结构顶部的金属污染物。 还提供了形成双层结构的方法。
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