发明授权
- 专利标题： Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material
- 专利标题（中）： 钛酸铅锆（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的铁电存储器件结构
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申请号： US11328582申请日： 2006-01-10
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公开(公告)号： US07344589B2公开(公告)日： 2008-03-18
- 发明人: Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
- 申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
- 申请人地址： US CT Danbury
- 专利权人： Advanced Technology Materials, Inc.
- 当前专利权人： Advanced Technology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理机构： Intellectual Property/Technology Law
- 代理商 Steven J. Hultquist; Margaret Chappuis
- 主分类号： C23C16/40
- IPC分类号： C23C16/40
摘要：
A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).