公开(公告)号：US07862857B2

公开(公告)日：2011-01-04

申请号：US12768374

申请日：2010-04-27

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： C23C16/40 ,  H01L21/02 ,  H01G4/10

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US07705382B2

公开(公告)日：2010-04-27

申请号：US11924716

申请日：2007-10-26

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US07344589B2

公开(公告)日：2008-03-18

申请号：US11328582

申请日：2006-01-10

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： C23C16/40

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15毫米。 在优选实施例中，对应的电容器区域（即，横向缩放）在大约10 -4至大约10 -2 m / 。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US06984417B2

公开(公告)日：2006-01-10

申请号：US09928860

申请日：2001-08-13

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： C23C16/06 ,  C23C16/00

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15毫米。 在优选实施例中，对应的电容器区域（即，横向缩放）在大约10 -4至大约10 -2 m / 。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US06316797B1

公开(公告)日：2001-11-13

申请号：US09251890

申请日：1999-02-19

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： H01L2976

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 &mgr;m. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 &mgr;m2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15毫米。 在优选实施例中相应的电容器面积（即横向缩放）在约104至约10-2mum2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US20110097478A1

公开(公告)日：2011-04-28

申请号：US12978393

申请日：2010-12-23

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： H01G4/00 ,  C23C16/06 ,  C23C16/448 ,  C04B35/472

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US20100209596A1

公开(公告)日：2010-08-19

申请号：US12768374

申请日：2010-04-27

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daneil J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daneil J. Vestyck ,  Thomas H. Baum

IPC分类号： B05D5/12

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US07012292B1

公开(公告)日：2006-03-14

申请号：US09200495

申请日：1998-11-25

申请人： Peter C. Van Buskirk ,  Steven M. Bilodeau ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Michael W. Russell

发明人： Peter C. Van Buskirk ,  Steven M. Bilodeau ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Michael W. Russell

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L27/11502 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

摘要： A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high ε film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high ε film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high ε film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO3.

公开(公告)号：US06346741B1

公开(公告)日：2002-02-12

申请号：US09200499

申请日：1998-11-25

申请人： Peter C. Van Buskirk ,  Michael W. Russell ,  Steven M. Bilodeau ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Michael W. Russell ,  Steven M. Bilodeau ,  Thomas H. Baum

IPC分类号： H01L2940

CPC分类号： H01L27/1085 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

摘要： An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors. Preferably, the transmission-enhancement material comprises MgMn ferrites, MgMnAl ferrites, barium strontium titanate, lead zirconium titanate, titanium oxide, tantalum oxide, etc.

摘要翻译： 通过化学机械抛光（CMP）工艺形成的集成电路结构，其包括凹入电介质基底中的导电通路，其中导电路径包括封装在透射增强材料中的导电传输线，并且其中导电通路依次由 传输增强材料的第一层，随后是导电传输线; 传输增强材料的第二层，其封装所述导电传输线并与所述透射增强材料的第一层接触，其中所述透射增强材料选自高磁导率材料和高介电常数材料。 这种集成电路结构可以包括从由电容器，电感器和电阻器组成的组中选择的器件结构。 优选地，透射增强材料包括MgMn铁氧体，MgMnAl铁氧体，钛酸锶钡，钛酸铅锆，氧化钛，氧化钽等

公开(公告)号：US08053375B1

公开(公告)日：2011-11-08

申请号：US11925838

申请日：2007-10-27

申请人： Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum ,  Steven M. Bilodeau ,  Scott Battle ,  William Hunks ,  Tianniu Chen

发明人： Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum ,  Steven M. Bilodeau ,  Scott Battle ,  William Hunks ,  Tianniu Chen

IPC分类号： H01L21/00 ,  C07F7/08 ,  C07C7/00

CPC分类号： H01L21/02274 ,  C09D183/04 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203

摘要： An ultra low k dielectric film, including a silicon film containing porosity deriving from a porogen, as formed from a precursor silane and a porogen, wherein the precursor silane has a water content below 10 ppm, based on total weight of the precursor silane, and/or the porogen has a water content below 10 ppm, based on total weight of the porogen. In one implementation, the precursor silane is diethoxymethylsilane, and the porogen is bicyclo[2.2.1]-hepta-2,5-diene having a trace water content below 10 ppm, based on total weight of said bicyclo[2.2.1]-hepta-2,5-diene. These super-dry reagents are unexpectedly polymerization-resistant during their delivery and deposition in the formation of ultra low k films, and are advantageously employed to produce ultra low k films of superior character.

摘要翻译： 一种超低k电介质膜，包括由前体硅烷和致孔剂形成的含有致孔剂的孔隙率的硅膜，其中前体硅烷的含水量基于前体硅烷的总重量低于10ppm，和 /或致孔剂的含水量基于致孔剂的总重量低于10ppm。 在一个实施方案中，前体硅烷是二乙氧基甲基硅烷，并且致孔剂是基于所述双环[2.2.1] - 二甲基甲硅烷基的总重量的具有痕量水含量低于10ppm的双环[2.2.1] - 庚-2,5-二烯。 庚-2,5-二烯。 这些超级干燥试剂在它们的输送和沉积期间在超低k膜的形成期间出人意料地具有抗聚合性，并且有利地用于生产优异特性的超低k膜。