公开(公告)号：US6157133A

公开(公告)日：2000-12-05

申请号：US90162

申请日：1998-06-04

Applicant: Vasgen A. Shamamian ,  Daniel J. Vestyck, Jr. ,  John L. Giuliani, Jr. ,  James E. Butler

Inventor： Vasgen A. Shamamian ,  Daniel J. Vestyck, Jr. ,  John L. Giuliani, Jr. ,  James E. Butler

IPC: H01J61/18 ,  H01J65/04 ,  H01J17/20 ,  H01J11/00

CPC classification number: H01J61/18 ,  H01J65/042

Abstract: A sealed, metal oxide, electrodeless discharge lamp having a high emissionntensity in the visible 400-700 nm range. Within the sealed container assembly of the lamp there is a source of metal atoms capable of forming a volatile oxide and a source of an oxygen containing gas. The lamp produces a plasma and volatilizes the metal into the plasma. Preferably the lamp is at a low pressure of about 20-40 torr and the metals are molybdenum or tungsten. Power is applied by inductively coupled electromagnetic radiation. A regenerative agent such as a halogen is added for recycling any deposited metal into the gas phase and to form a volatile compound with the source of metal atoms. The agent lowers the temperatures needed to volatilize the metal into the plasma. The lamp is operated by first providing energy at a low level to initiate the plasma and then supplying the metal atoms into the plasma.

Abstract translation: 一种密封的金属氧化物无电极放电灯，其可见光范围为400-700nm，发光强度高。 在灯的密封容器组件内，存在能够形成挥发性氧化物和含氧气体源的金属原子源。 灯产生等离子体并将金属挥发成等离子体。 优选地，灯处于约20-40托的低压，并且金属是钼或钨。 电感通过电感耦合电磁辐射施加。 加入诸如卤素的再生剂用于将任何沉积的金属再循环到气相中并与金属原子源形成挥发性化合物。 该试剂降低将金属挥发成等离子体所需的温度。 通过首先以低水平提供能量以启动等离子体，然后将金属原子供应到等离子体中来操作灯。

公开(公告)号：US20130334628A1

公开(公告)日：2013-12-19

申请号：US13992118

申请日：2010-12-07

Applicant: Daniel J. Vestyck

Inventor： Daniel J. Vestyck

IPC: B81C1/00

CPC classification number: B81C1/00523 ,  B81C1/00936

Abstract: A method of avoiding stiction during vapor hydrofluoride (VHF) release of a microelectromechanical system (MEMS) or nanoelectromechanical system (NEMS) composed of a mechanical device and a substrate is described. A silicon nitride layer is provided between the substrate and a sacrificial oxide layer and/or between a device layer and the sacrificial oxide layer, and/or on a side of the device layer facing away from the sacrificial oxide layer, and converted to thicker ammonium hexafluorosilicate with VHF while simultaneously removing a portion of the sacrificial oxide. The ammonium hexafluorosilicate acts as a temporary support, shim, wedge, or tether which limits device movement during fabrication and is later removed by sublimation under heat and/or reduced pressure.

Abstract translation: 描述了在由机械装置和基板组成的微机电系统（MEMS）或纳米机电系统（NEMS）的蒸气氢氟酸（VHF）释放期间避免静摩擦的方法。 在衬底和牺牲氧化物层之间和/或器件层和牺牲氧化物层之间和/或在器件层的背离牺牲氧化物层的一侧上提供氮化硅层，并将其转化为较厚的铵 六氟硅酸盐与VHF同时除去一部分牺牲氧化物。 六氟硅酸铵用作临时支撑物，垫片，楔形物或系绳，其限制制造过程中的装置运动，并且随后在加热和/或减压下通过升华除去。

公开(公告)号：US20130153045A1

公开(公告)日：2013-06-20

申请号：US13809610

申请日：2010-07-14

Applicant: Daniel J Vestyck

Inventor： Daniel J Vestyck

IPC: F17C13/00

CPC classification number: F17C13/002 ,  C23C16/45557 ,  H01L21/31116 ,  H01L21/67017 ,  H01L21/67253 ,  Y10T137/0396 ,  Y10T137/86002

Abstract: A method of and apparatus for controlling pressure in a process chamber having a continuous gas inlet flow and a continuous gas outlet flow comprising providing a pulsed valve at a gas outlet, a pressure gauge, and a programmable controller and varying the pulse rate of the pulsed valve, wherein either the open time or closed time, or both open and closed times, is lengthened or shortened, depending on whether the gauge pressure is above or below the programmed setpoint.

Abstract translation: 一种用于控制具有连续气体入口流和连续气体出口流的处理室中的压力的​​方法和装置，包括在气体出口，压力计和可编程控制器处提供脉冲阀，并且改变脉冲 阀，其中打开时间或关闭时间，或打开和关闭时间都被延长或缩短，这取决于表压高于或低于编程设定值。

公开(公告)号：US07862857B2

公开(公告)日：2011-01-04

申请号：US12768374

申请日：2010-04-27

Applicant: Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

Inventor： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC: C23C16/40 ,  H01L21/02 ,  H01G4/10

CPC classification number: C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Abstract translation: 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US07705382B2

公开(公告)日：2010-04-27

申请号：US11924716

申请日：2007-10-26

Applicant: Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

Inventor： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Abstract translation: 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US07344589B2

公开(公告)日：2008-03-18

申请号：US11328582

申请日：2006-01-10

Applicant: Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

Inventor： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC: C23C16/40

CPC classification number: C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Abstract translation: 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15毫米。 在优选实施例中，对应的电容器区域（即，横向缩放）在大约10 -4至大约10 -2 m / 。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US07012292B1

公开(公告)日：2006-03-14

申请号：US09200495

申请日：1998-11-25

Applicant: Peter C. Van Buskirk ,  Steven M. Bilodeau ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Michael W. Russell

Inventor： Peter C. Van Buskirk ,  Steven M. Bilodeau ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Michael W. Russell

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: H01L27/11502 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60

Abstract: A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high ε film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high ε film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high ε film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO3.

公开(公告)号：US09139425B2

公开(公告)日：2015-09-22

申请号：US13992118

申请日：2010-12-07

Applicant: Daniel J. Vestyck

Inventor： Daniel J. Vestyck

IPC: H01L21/00 ,  H01L29/84 ,  B81C1/00

CPC classification number: B81C1/00523 ,  B81C1/00936

Abstract: A method of avoiding stiction during vapor hydrofluoride (VHF) release of a microelectromechanical system (MEMS) or nanoelectromechanical system (NEMS) composed of a mechanical device and a substrate is described. A silicon nitride layer is provided between the substrate and a sacrificial oxide layer and/or between a device layer and the sacrificial oxide layer, and/or on a side of the device layer facing away from the sacrificial oxide layer, and converted to thicker ammonium hexafluorosilicate with VHF while simultaneously removing a portion of the sacrificial oxide. The ammonium hexafluorosilicate acts as a temporary support, shim, wedge, or tether which limits device movement during fabrication and is later removed by sublimation under heat and/or reduced pressure.

Abstract translation: 描述了在由机械装置和基板组成的微机电系统（MEMS）或纳米机电系统（NEMS）的蒸气氢氟酸（VHF）释放期间避免静摩擦的方法。 在衬底和牺牲氧化物层之间和/或器件层和牺牲氧化物层之间和/或在器件层的背离牺牲氧化物层的一侧上提供氮化硅层，并将其转化为较厚的铵 六氟硅酸盐与VHF同时除去一部分牺牲氧化物。 六氟硅酸铵用作临时支撑物，垫片，楔形物或系绳，其限制制造过程中的装置运动，并且随后在加热和/或减压下通过升华除去。

公开(公告)号：US20110097478A1

公开(公告)日：2011-04-28

申请号：US12978393

申请日：2010-12-23

Applicant: Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

Inventor： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC: H01G4/00 ,  C23C16/06 ,  C23C16/448 ,  C04B35/472

CPC classification number: C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

Abstract: A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

Abstract translation: 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US10161567B2

公开(公告)日：2018-12-25

申请号：US13809610

申请日：2010-07-14

Applicant: Daniel J. Vestyck

Inventor： Daniel J. Vestyck

IPC: F17C13/00 ,  C23C16/455 ,  H01L21/67 ,  H01L21/311

Abstract: A method of and apparatus for controlling pressure in a process chamber having a continuous gas inlet flow and a continuous gas outlet flow comprising providing a pulsed valve at a gas outlet, a pressure gauge, and a programmable controller and varying the pulse rate of the pulsed valve, wherein either the open time or closed time, or both open and closed times, is lengthened or shortened, depending on whether the gauge pressure is above or below the programmed setpoint.