发明授权
- 专利标题： Technique for ion beam angle process control
- 专利标题（中）： 离子束角过程控制技术
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申请号： US11146064申请日： 2005-06-07
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公开(公告)号： US07348576B2公开(公告)日： 2008-03-25
- 发明人: Atul Gupta , Joseph C. Olson
- 申请人： Atul Gupta , Joseph C. Olson
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 主分类号： G21K5/10
- IPC分类号： G21K5/10 ; H01J37/08
摘要：
A technique for ion beam angle process control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle process control in an ion implanter system. The method may comprise directing one or more ion beams at a substrate surface. The method may also comprise determining an average spread of incident angles at which the one or more ion beams strike the substrate surface. The method may further comprise adjusting the one or more ion beams based at least in part on the average spread of incident angles to produce a desired spread of ion beam incident angles.
公开/授权文献
- US20060208203A1 Technique for ion beam angle process control 公开/授权日：2006-09-21
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