发明授权
- 专利标题: Methods of fabricating passive element without planarizing and related semiconductor device
- 专利标题(中): 无平面化制造无源元件及相关半导体器件的方法
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申请号: US11928798申请日: 2007-10-30
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公开(公告)号: US07394145B2公开(公告)日: 2008-07-01
- 发明人: Anil K Chinthakindi , Timothy J. Dalton , Ebenezer E. Eshun , Jeffrey P. Gambino , Anthony K. Stamper , Kunal Vaed
- 申请人: Anil K Chinthakindi , Timothy J. Dalton , Ebenezer E. Eshun , Jeffrey P. Gambino , Anthony K. Stamper , Kunal Vaed
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Hoffman Warnick LLC
- 代理商 Lisa Jaklitsch
- 主分类号: H01L29/00
- IPC分类号: H01L29/00 ; H01L21/20
摘要:
Methods of fabricating a passive element and a semiconductor device including the passive element are disclosed including the use of a dummy passive element. A dummy passive element is a passive element or wire which is added to the chip layout to aid in planarization but is not used in the active circuit. One embodiment of the method includes forming the passive element and a dummy passive element adjacent to the passive element; forming a dielectric layer over the passive element and the dummy passive element, wherein the dielectric layer is substantially planar between the passive element and the dummy passive element; and forming in the dielectric layer an interconnect to the passive element through the dielectric layer and a dummy interconnect portion overlapping at least a portion of the dummy passive element. The methods eliminate the need for planarizing.
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