Invention Grant
- Patent Title: Methods of fabricating passive element without planarizing and related semiconductor device
- Patent Title (中): 无平面化制造无源元件及相关半导体器件的方法
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Application No.: US11928798Application Date: 2007-10-30
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Publication No.: US07394145B2Publication Date: 2008-07-01
- Inventor: Anil K Chinthakindi , Timothy J. Dalton , Ebenezer E. Eshun , Jeffrey P. Gambino , Anthony K. Stamper , Kunal Vaed
- Applicant: Anil K Chinthakindi , Timothy J. Dalton , Ebenezer E. Eshun , Jeffrey P. Gambino , Anthony K. Stamper , Kunal Vaed
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Lisa Jaklitsch
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/20

Abstract:
Methods of fabricating a passive element and a semiconductor device including the passive element are disclosed including the use of a dummy passive element. A dummy passive element is a passive element or wire which is added to the chip layout to aid in planarization but is not used in the active circuit. One embodiment of the method includes forming the passive element and a dummy passive element adjacent to the passive element; forming a dielectric layer over the passive element and the dummy passive element, wherein the dielectric layer is substantially planar between the passive element and the dummy passive element; and forming in the dielectric layer an interconnect to the passive element through the dielectric layer and a dummy interconnect portion overlapping at least a portion of the dummy passive element. The methods eliminate the need for planarizing.
Public/Granted literature
- US20080054393A1 METHODS OF FABRICATING PASSIVE ELEMENT WITHOUT PLANARIZING AND RELATED SEMICONDUCTOR DEVICE Public/Granted day:2008-03-06
Information query
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