发明授权
- 专利标题： Semiconductor device and process for producing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11108827申请日： 2005-04-19
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公开(公告)号： US07402473B2公开(公告)日： 2008-07-22
- 发明人: Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
- 申请人： Norio Ishitsuka , Hideo Miura , Shuji Ikeda , Norio Suzuki , Yasushi Matsuda , Yasuko Yoshida , Hirohiko Yamamoto , Masamichi Kobayashi , Akira Takamatsu , Hirofumi Shimizu , Kazushi Fukuda , Shinichi Horibe , Toshio Nozoe
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Renesas Technology Corp.,Hitachi ULSI Systems Co., Ltd.
- 当前专利权人： Renesas Technology Corp.,Hitachi ULSI Systems Co., Ltd.
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP9-033597 19970218; JP9-112467 19970430
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/76
摘要：
A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
公开/授权文献
- US20050196935A1 Semiconductor device and process for producing the same 公开/授权日：2005-09-08
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