发明授权
- 专利标题： Memory with dynamically adjustable supply
- 专利标题（中）： 内存动态可调电源
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申请号： US11137905申请日： 2005-05-25
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公开(公告)号： US07403426B2公开(公告)日： 2008-07-22
- 发明人: Fatih Hamzaoglu , Kevin Zhang , Nam Sung Kim , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Vivek K. De , Bo Zheng
- 申请人： Fatih Hamzaoglu , Kevin Zhang , Nam Sung Kim , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Vivek K. De , Bo Zheng
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Erik R. Nordstrom
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
In some embodiments, a memory array is provided with cells that when written to or read from, can have modified supplies to enhance their read stability and/or write margin performance. Other embodiments may be disclosed and/or claimed.
公开/授权文献
- US20060268626A1 Memory with dynamically adjustable supply 公开/授权日：2006-11-30
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