Invention Grant
- Patent Title: Memory with dynamically adjustable supply
- Patent Title (中): 内存动态可调电源
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Application No.: US11137905Application Date: 2005-05-25
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Publication No.: US07403426B2Publication Date: 2008-07-22
- Inventor: Fatih Hamzaoglu , Kevin Zhang , Nam Sung Kim , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Vivek K. De , Bo Zheng
- Applicant: Fatih Hamzaoglu , Kevin Zhang , Nam Sung Kim , Muhammad M. Khellah , Dinesh Somasekhar , Yibin Ye , Vivek K. De , Bo Zheng
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Erik R. Nordstrom
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
In some embodiments, a memory array is provided with cells that when written to or read from, can have modified supplies to enhance their read stability and/or write margin performance. Other embodiments may be disclosed and/or claimed.
Public/Granted literature
- US20060268626A1 Memory with dynamically adjustable supply Public/Granted day:2006-11-30
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