发明授权
- 专利标题： Method of forming a dual damascene structure utilizing a developable anti-reflective coating
- 专利标题（中）： 使用可显影的抗反射涂层形成双镶嵌结构的方法
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申请号： US11694623申请日： 2007-03-30
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公开(公告)号： US07432191B1公开(公告)日： 2008-10-07
- 发明人: Harlan D. Stamper , Shannon W. Dunn , Sandra Hyland
- 申请人： Harlan D. Stamper , Shannon W. Dunn , Sandra Hyland
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Wood, Herron & Evans, LLP
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
A method of patterning a structure in a thin film on a substrate is described. A film stack on the substrate includes the thin film on the substrate, a developable anti-reflective coating (ARC) layer on the thin film, and a first photo-resist layer on the developable ARC layer. The first photo-resist layer and the developable ARC layer are imaged with a first image pattern and developed to form the first image pattern in the first photo-resist layer and the developable ARC layer. Thereafter, the first photo-resist layer is removed, and the developable ARC layer is modified by thermal treatment. A second photo-resist layer is then formed on the modified ARC layer, and the second photo-resist layer is imaged with a second image pattern and developed to form the second image pattern in the second photo-resist layer. The first and second image patterns are then transferred to the thin film.