Invention Grant
US07449756B2 Semiconductor device with a high-k gate dielectric and a metal gate electrode
失效
具有高k栅极电介质和金属栅电极的半导体器件
- Patent Title: Semiconductor device with a high-k gate dielectric and a metal gate electrode
- Patent Title (中): 具有高k栅极电介质和金属栅电极的半导体器件
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Application No.: US11151528Application Date: 2005-06-13
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Publication No.: US07449756B2Publication Date: 2008-11-11
- Inventor: Matthew V. Metz , Suman Datta , Mark L. Doczy , Justin K. Brask , Jack Kavalieros , Robert S. Chau
- Applicant: Matthew V. Metz , Suman Datta , Mark L. Doczy , Justin K. Brask , Jack Kavalieros , Robert S. Chau
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kenneth A. Nelson
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A semiconductor device is described. That semiconductor device comprises a high-k gate dielectric layer that is formed on a substrate that applies strain to the high-k gate dielectric layer, and a metal gate electrode that is formed on the high-k gate dielectric layer.
Public/Granted literature
- US20060278941A1 Semiconductor device with a high-k gate dielectric and a metal gate electrode Public/Granted day:2006-12-14
Information query
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