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发明授权
US07462900B2 Phase changeable memory devices including nitrogen and/or silicon 有权
包括氮和/或硅的相变存储器件

Phase changeable memory devices including nitrogen and/or silicon
摘要：
Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that may include nitrogen atoms and/or silicon atoms. First and second electrodes are electrically connected to the phase-changeable material pattern and provide an electrical signal thereto. The phase-changeable material pattern may have a polycrystal line structure.
摘要（中）：

提供了可相变存储器件和制造可相变存储器件的方法，其包括可包括氮原子和/或硅原子的相变材料的相变材料图案。 第一和第二电极电连接到相变材料图案并向其提供电信号。 相变材料图案可以具有多晶结构。

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