发明授权
- 专利标题： Method and apparatus for cleaning a CVD chamber
- 专利标题（中）： 用于清洁CVD室的方法和设备
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申请号： US10354214申请日： 2003-01-27
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公开(公告)号： US07500445B2公开(公告)日： 2009-03-10
- 发明人: Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
- 申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; H01L21/00
摘要：
The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
公开/授权文献
- US20040144490A1 Method and apparatus for cleaning a CVD chamber 公开/授权日：2004-07-29
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