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公开(公告)号：US07654224B2
公开(公告)日：2010-02-02
申请号：US12372312
申请日：2009-02-17
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US20090145360A1
公开(公告)日：2009-06-11
申请号：US12372312
申请日：2009-02-17
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： C23C16/54
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US07500445B2
公开(公告)日：2009-03-10
申请号：US10354214
申请日：2003-01-27
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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4.发明授权Computer-readable medium that contains software for executing a method for cleaning a CVD chamber 失效包含用于执行清洁CVD室的方法的软件的计算机可读介质公开(公告)号：US07465357B2
公开(公告)日：2008-12-16
申请号：US11426154
申请日：2006-06-23
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US07464717B2
公开(公告)日：2008-12-16
申请号：US11424959
申请日：2006-06-19
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US20100095891A1
公开(公告)日：2010-04-22
申请号：US12684039
申请日：2010-01-07
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： H01L21/465
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US06946033B2
公开(公告)日：2005-09-20
申请号：US10245443
申请日：2002-09-16
申请人： Lun Tsuei , Soovo Sen , Ju-Hyung Lee , Juan Carlos Rocha-Alvarez , Inna Shmurun , Maosheng Zhao , Troy Kim , Shankar Venkataraman
发明人： Lun Tsuei , Soovo Sen , Ju-Hyung Lee , Juan Carlos Rocha-Alvarez , Inna Shmurun , Maosheng Zhao , Troy Kim , Shankar Venkataraman
IPC分类号： C23C16/44 , C23C16/455 , C23C16/509 , H01L21/00 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4557 , C23C16/45565 , C23C16/5096 , H01L21/67017
摘要： An apparatus for distributing gas in a processing system. In one embodiment, the system includes a gas distribution assembly having a gas distribution plate. The gas distribution plate defines a plurality of holes through which gases are transmitted. The assembly further includes a gas box coupled to the gas distribution plate, in which the gas box is configured to supply the gases into the plurality of holes. The assembly further includes a means for reducing heat transfer from the gas box to the gas distribution plate.
摘要翻译： 一种用于在处理系统中分配气体的装置。 在一个实施例中，该系统包括具有气体分配板的气体分配组件。 气体分配板限定了多个孔，气体通过该孔被传输。 组件还包括联接到气体分配板的气体箱，气箱配置成将气体供应到多个孔中。 组件还包括用于减少从气箱到气体分配板的热传递的装置。
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公开(公告)号：US20060225767A1
公开(公告)日：2006-10-12
申请号：US11424959
申请日：2006-06-19
申请人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
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公开(公告)号：US20060231205A1
公开(公告)日：2006-10-19
申请号：US11426154
申请日：2006-06-23
申请人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
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10.发明授权Cleaning of CVD chambers using remote source with cxfyoz based chemistry 失效使用基于cxfyoz的化学物质的远程源清洁CVD室公开(公告)号：US06923189B2
公开(公告)日：2005-08-02
申请号：US10346836
申请日：2003-01-16
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method and apparatus for cleaning a processing chamber are provided. The cleaning method includes the use of a remote plasma source to generate reactive species and an in situ RF power to generate or regenerate reactive species. The reactive species are generated from a carbon and fluorine-containing gas and an oxygen source.
摘要翻译： 提供一种用于清洁处理室的方法和装置。 清洁方法包括使用远程等离子体源来产生反应物种和原位RF功率以产生或再生反应性物质。 活性物质由碳和含氟气体和氧源产生。
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