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公开(公告)号：US20100095891A1
公开(公告)日：2010-04-22
申请号：US12684039
申请日：2010-01-07
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： H01L21/465
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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2.发明授权Computer-readable medium that contains software for executing a method for cleaning a CVD chamber 失效包含用于执行清洁CVD室的方法的软件的计算机可读介质公开(公告)号：US07465357B2
公开(公告)日：2008-12-16
申请号：US11426154
申请日：2006-06-23
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US07464717B2
公开(公告)日：2008-12-16
申请号：US11424959
申请日：2006-06-19
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US07654224B2
公开(公告)日：2010-02-02
申请号：US12372312
申请日：2009-02-17
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US20090145360A1
公开(公告)日：2009-06-11
申请号：US12372312
申请日：2009-02-17
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： C23C16/54
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US07500445B2
公开(公告)日：2009-03-10
申请号：US10354214
申请日：2003-01-27
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US20060225767A1
公开(公告)日：2006-10-12
申请号：US11424959
申请日：2006-06-19
申请人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
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公开(公告)号：US20060231205A1
公开(公告)日：2006-10-19
申请号：US11426154
申请日：2006-06-23
申请人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
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