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公开(公告)号：US20100095891A1
公开(公告)日：2010-04-22
申请号：US12684039
申请日：2010-01-07
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： H01L21/465
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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2.发明授权Computer-readable medium that contains software for executing a method for cleaning a CVD chamber 失效包含用于执行清洁CVD室的方法的软件的计算机可读介质公开(公告)号：US07465357B2
公开(公告)日：2008-12-16
申请号：US11426154
申请日：2006-06-23
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US07464717B2
公开(公告)日：2008-12-16
申请号：US11424959
申请日：2006-06-19
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US07654224B2
公开(公告)日：2010-02-02
申请号：US12372312
申请日：2009-02-17
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US20090145360A1
公开(公告)日：2009-06-11
申请号：US12372312
申请日：2009-02-17
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： C23C16/54
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US07500445B2
公开(公告)日：2009-03-10
申请号：US10354214
申请日：2003-01-27
申请人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Carlos Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao D. Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
摘要翻译： 本发明是一种方法和装置，该方法和设备使用在由电极与腔室的反应体积分离的气体混合容积中的等离子体通电的清洁气体来清洁化学气相沉积（CVD）室。 在一个实施例中，RF功率源耦合到室的盖，而开关用于将喷头连接到接地端子或RF功率源。
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公开(公告)号：US06946033B2
公开(公告)日：2005-09-20
申请号：US10245443
申请日：2002-09-16
申请人： Lun Tsuei , Soovo Sen , Ju-Hyung Lee , Juan Carlos Rocha-Alvarez , Inna Shmurun , Maosheng Zhao , Troy Kim , Shankar Venkataraman
发明人： Lun Tsuei , Soovo Sen , Ju-Hyung Lee , Juan Carlos Rocha-Alvarez , Inna Shmurun , Maosheng Zhao , Troy Kim , Shankar Venkataraman
IPC分类号： C23C16/44 , C23C16/455 , C23C16/509 , H01L21/00 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4557 , C23C16/45565 , C23C16/5096 , H01L21/67017
摘要： An apparatus for distributing gas in a processing system. In one embodiment, the system includes a gas distribution assembly having a gas distribution plate. The gas distribution plate defines a plurality of holes through which gases are transmitted. The assembly further includes a gas box coupled to the gas distribution plate, in which the gas box is configured to supply the gases into the plurality of holes. The assembly further includes a means for reducing heat transfer from the gas box to the gas distribution plate.
摘要翻译： 一种用于在处理系统中分配气体的装置。 在一个实施例中，该系统包括具有气体分配板的气体分配组件。 气体分配板限定了多个孔，气体通过该孔被传输。 组件还包括联接到气体分配板的气体箱，气箱配置成将气体供应到多个孔中。 组件还包括用于减少从气箱到气体分配板的热传递的装置。
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公开(公告)号：US20060225767A1
公开(公告)日：2006-10-12
申请号：US11424959
申请日：2006-06-19
申请人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
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公开(公告)号：US20060231205A1
公开(公告)日：2006-10-19
申请号：US11426154
申请日：2006-06-23
申请人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
发明人： Maosheng Zhao , Juan Rocha-Alvarez , Inna Shmurun , Soova Sen , Mao Lim , Shankar Venkataraman , Ju-Hyung Lee
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： C23C16/4405 , C23C16/458 , C23C16/46 , H01J37/32082 , H01J37/32862 , H01L21/67103
摘要： The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.
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10.发明授权Method for cleaning plasma enhanced chemical vapor deposition chamber using very high frequency energy 失效使用非常高频能量清洗等离子体增强化学气相沉积室的方法公开(公告)号：US06932092B2
公开(公告)日：2005-08-23
申请号：US10302350
申请日：2002-11-22
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method for cleaning a plasma enhanced chemical vapor deposition chamber. The method includes introducing a cleaning gas into the plasma enhanced chemical vapor deposition chamber, forming a plasma using a very high frequency (VHF) power having a frequency in a range from about 20 MHz to about 100 MHz, and reacting the cleaning gas with deposits within the chamber in the presence of the plasma.
摘要翻译： 一种用于清洁等离子体增强化学气相沉积室的方法。 该方法包括将清洁气体引入等离子体增强化学气相沉积室中，使用频率在约20MHz至约100MHz范围内的非常高频（VHF）功率形成等离子体，并使清洗气体与沉积物 在等离子体存在下的室内。
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