发明授权
- 专利标题： Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display
- 专利标题（中）： 结晶装置，结晶装置中使用的光学构件，结晶方法，薄膜晶体管的制造方法以及显示器的矩阵电路基板的制造方法
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申请号： US11442331申请日： 2006-05-30
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公开(公告)号： US07537660B2公开(公告)日： 2009-05-26
- 发明人: Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
- 申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
- 申请人地址： JP Yokohama
- 专利权人： Advanced LCD Technologies Development Center Co., Ltd.
- 当前专利权人： Advanced LCD Technologies Development Center Co., Ltd.
- 当前专利权人地址： JP Yokohama
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权： JP2002-188846 20020628
- 主分类号： C30B25/04
- IPC分类号： C30B25/04
摘要：
A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film.