发明授权
- 专利标题： Method of dry cleaning silicon surface prior to forming self-aligned nickel silicide layer
- 专利标题（中）： 在形成自对准镍硅化物层之前干法硅表面的方法
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申请号： US11733316申请日： 2007-04-10
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公开(公告)号： US07566662B2公开(公告)日： 2009-07-28
- 发明人: Takuya Futase , Hideaki Tsugane , Mitsuo Kimoto , Hidenori Suzuki
- 申请人： Takuya Futase , Hideaki Tsugane , Mitsuo Kimoto , Hidenori Suzuki
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2006-107780 20060410
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
Provided is a method of manufacturing a semiconductor device. After a semiconductor wafer is placed over a wafer stage with which a dry cleaning chamber of a film forming apparatus is equipped, dry cleaning treatment is given over the surface of the semiconductor wafer with a reducing gas. Then, the semiconductor wafer is heat treated at a first temperature of from 100 to 150° C. by using a shower head kept at 180° C. The semiconductor wafer is then vacuum-transferred to a heat treatment chamber, wherein the semiconductor wafer is heat treated at a second temperature of from 150 to 400° C. A product remaining over the main surface of the semiconductor wafer is thus removed. The present invention makes it possible to manufacture a semiconductor device having improved reliability and production yield by reducing variations in the electrical properties of a nickel silicide layer.
公开/授权文献
- US20070238321A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2007-10-11
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