Invention Grant
- Patent Title: Electronic device including a gated diode
- Patent Title (中): 电子设备包括门控二极管
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Application No.: US12201074Application Date: 2008-08-29
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Publication No.: US07573114B2Publication Date: 2009-08-11
- Inventor: Leo Mathew , Michael G. Khazhinsky
- Applicant: Leo Mathew , Michael G. Khazhinsky
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/861
- IPC: H01L29/861 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/075 ; H01L31/105 ; H01L31/117

Abstract:
An electronic device can include a gated diode, wherein the gated diode includes a junction diode structure including a junction. A first conductive member spaced apart from and adjacent to the junction can be connected to a first signal line. A second conductive member, spaced apart from and adjacent to the junction, can be both electrically connected to a second signal line and electrically insulated from the first conductive member. The junction diode structure can include a p-n or a p-i-n junction. A process for forming the electronic device is also described.
Public/Granted literature
- US20080315315A1 ELECTRONIC DEVICE INCLUDING A GATED DIODE Public/Granted day:2008-12-25
Information query
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