发明授权
- 专利标题: Method for the rapid synthesis of large quantities of metal oxide nanowires at low temperatures
- 专利标题(中): 在低温下快速合成大量金属氧化物纳米线的方法
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申请号: US11385015申请日: 2006-03-20
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公开(公告)号: US07591897B2公开(公告)日: 2009-09-22
- 发明人: Mahendra Kumar Sunkara , Sreeram Vaddiraju , Miran Mozetic , Uros Cvelbar
- 申请人: Mahendra Kumar Sunkara , Sreeram Vaddiraju , Miran Mozetic , Uros Cvelbar
- 申请人地址: US KY Louisville
- 专利权人: University of Louisville Research Foundation, Inc.
- 当前专利权人: University of Louisville Research Foundation, Inc.
- 当前专利权人地址: US KY Louisville
- 代理机构: Stites & Harbison PLLC
- 代理商 Robert C. Yang
- 主分类号: C30B13/00
- IPC分类号: C30B13/00 ; C30B21/04 ; C30B28/08 ; C30B23/00 ; C30B25/00 ; C30B28/12 ; C30B28/14
摘要:
A process for the rapid synthesis of metal oxide nanoparticles at low temperatures and methods which facilitate the fabrication of long metal oxide nanowires. The method is based on treatment of metals with oxygen plasma. Using oxygen plasma at low temperatures allows for rapid growth unlike other synthesis methods where nanomaterials take a long time to grow. Density of neutral oxygen atoms in plasma is a controlling factor for the yield of nanowires. The oxygen atom density window differs for different materials. By selecting the optimal oxygen atom density for various materials the yield can be maximized for nanowire synthesis of the metal.
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