Invention Grant
- Patent Title: Vertical memory device and method
- Patent Title (中): 垂直存储器件和方法
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Application No.: US11939675Application Date: 2007-11-14
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Publication No.: US07663172B2Publication Date: 2010-02-16
- Inventor: Jun-Fei Zheng , Pranav Kalavade
- Applicant: Jun-Fei Zheng , Pranav Kalavade
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Kacvinsky LLC
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119
Abstract:
Method and apparatus are described for a memory cell includes a substrate, a body extending vertically from the substrate, a first gate having a vertical member and a horizontal member and a second gate comprising a vertical member and a horizontal member. The first gate is disposed laterally from the body and the second gate is disposed laterally from the first gate.
Public/Granted literature
- US20080061318A1 VERTICAL MEMORY DEVICE AND METHOD Public/Granted day:2008-03-13
Information query
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