发明授权
- 专利标题: Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact
- 专利标题(中): 制造包括氮化镓半导体结构和钯接触的半导体器件的方法
-
申请号: US12323634申请日: 2008-11-26
-
公开(公告)号: US07678597B2公开(公告)日: 2010-03-16
- 发明人: Kenichi Ohtsuka , Yoichiro Tarui , Yosuke Suzuki , Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Yasunori Tokuda , Tatsuo Omori
- 申请人: Kenichi Ohtsuka , Yoichiro Tarui , Yosuke Suzuki , Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Yasunori Tokuda , Tatsuo Omori
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Leydig, Voit & Mayer, Ltd.
- 优先权: JP2007-308541 20071129
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/28 ; H01L21/3205
摘要:
A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.
公开/授权文献
- US20090142871A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日:2009-06-04