发明授权
- 专利标题: Magnesium oxide single crystal and method for producing the same
- 专利标题(中): 氧化镁单晶及其制造方法
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申请号: US11909505申请日: 2006-03-24
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公开(公告)号: US07691200B2公开(公告)日: 2010-04-06
- 发明人: Atsuo Toutsuka , Yoshifumi Kawaguchi , Masaaki Kunishige
- 申请人: Atsuo Toutsuka , Yoshifumi Kawaguchi , Masaaki Kunishige
- 申请人地址: JP Hyogo
- 专利权人: Tateho Chemical Industries Co., Ltd
- 当前专利权人: Tateho Chemical Industries Co., Ltd
- 当前专利权人地址: JP Hyogo
- 代理机构: Lucas & Mercanti, LLP
- 优先权: JP2005-087967 20050325
- 国际申请: PCT/JP2006/305926 WO 20060324
- 国际公布: WO2006/104027 WO 20061005
- 主分类号: C30B13/00
- IPC分类号: C30B13/00 ; C30B21/04 ; C30B28/08 ; C21B11/10 ; C21B13/12 ; C01F5/02 ; C01F5/14 ; C04B35/00
摘要:
Provided is a MgO single crystal for obtaining a magnesium oxide (MgO) single crystal deposition material which is prevented from splashing during the vapor deposition in, e.g., an electron beam deposition method without reducing the deposition rate, and for obtaining a MgO single crystal substrate which can form thereon, e.g., a superconductor thin film having excellent superconducting properties. A MgO single crystal having a calcium content of 150×10−6 to 1,000×10−6 kg/kg and a silicon content of 10×10−6 kg/kg or less, wherein the MgO single crystal has a variation of 30% or less in terms of a CV value in detected amounts of calcium fragment ions, as analyzed by TOF-SIMS with respect to the polished surface of the MgO single crystal. A MgO single crystal deposition material and a MgO single crystal substrate for forming a thin film obtained from the MgO single crystal.
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