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1.发明授权公开(公告)号：US07544345B2
公开(公告)日：2009-06-09
申请号：US11722921
申请日：2005-12-28
摘要： A magnesium oxide single crystal having controlled crystallinity has a subboundary, and ranges of variation of diffraction line positions, as measured for reciprocal lattice maps with respect to a region surrounded by the same subboundary, with the range of the variation of 1×10−3 to 2×10−2 degree of on Δω coordinates, and with the range of the variation of 4×10−4 to 5×10−3 degree on 2θ coordinates.
摘要翻译： 具有可控结晶度的氧化镁单晶具有子边界，以及相对于由相同子边界包围的区域的互易格子图测量的衍射线位置的变化范围，其变化范围为1×10 -3至2×10 在Deltaomega坐标上为-2度，在2θ坐标上的变化范围为4x10-4至5x10-3度。
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公开(公告)号：US20090053131A1
公开(公告)日：2009-02-26
申请号：US11909505
申请日：2006-03-24
CPC分类号： C30B29/16 , C23C14/081 , C30B11/003 , C30B23/066
摘要： Provided is a MgO single crystal for obtaining a magnesium oxide (MgO) single crystal deposition material which is prevented from splashing during the vapor deposition in, e.g., an electron beam deposition method without reducing the deposition rate, and for obtaining a MgO single crystal substrate which can form thereon, e.g., a superconductor thin film having excellent superconducting properties. A MgO single crystal having a calcium content of 150×10−6 to 1,000×10−6 kg/kg and a silicon content of 10×10−6 kg/kg or less, wherein the MgO single crystal has a variation of 30% or less in terms of a CV value in detected amounts of calcium fragment ions, as analyzed by TOF-SIMS with respect to the polished surface of the MgO single crystal. A MgO single crystal deposition material and a MgO single crystal substrate for forming a thin film obtained from the MgO single crystal.
摘要翻译： 本发明提供一种用于获得氧化镁（MgO）单晶沉积材料的MgO单晶，其在例如电子束沉积方法中在气相沉积期间防止溅射而不降低沉积速率，并且获得MgO单晶衬底 其可以在其上形成，例如具有优异超导性能的超导体薄膜。 具有钙含量为150×10 -6〜1,000×10 -6 kg / kg，硅含量为10×10 -6 kg / kg以下的MgO单晶，其中MgO单晶的变化范围为30％以下， 通过TOF-SIMS相对于MgO单晶的抛光表面分析的钙碎片离子的检测量的CV值。 一种MgO单晶沉积材料和用于形成由MgO单晶获得的薄膜的MgO单晶衬底。
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公开(公告)号：US07691200B2
公开(公告)日：2010-04-06
申请号：US11909505
申请日：2006-03-24
CPC分类号： C30B29/16 , C23C14/081 , C30B11/003 , C30B23/066
摘要： Provided is a MgO single crystal for obtaining a magnesium oxide (MgO) single crystal deposition material which is prevented from splashing during the vapor deposition in, e.g., an electron beam deposition method without reducing the deposition rate, and for obtaining a MgO single crystal substrate which can form thereon, e.g., a superconductor thin film having excellent superconducting properties. A MgO single crystal having a calcium content of 150×10−6 to 1,000×10−6 kg/kg and a silicon content of 10×10−6 kg/kg or less, wherein the MgO single crystal has a variation of 30% or less in terms of a CV value in detected amounts of calcium fragment ions, as analyzed by TOF-SIMS with respect to the polished surface of the MgO single crystal. A MgO single crystal deposition material and a MgO single crystal substrate for forming a thin film obtained from the MgO single crystal.
摘要翻译： 本发明提供一种用于获得氧化镁（MgO）单晶沉积材料的MgO单晶，其在例如电子束沉积方法中在气相沉积期间防止溅射而不降低沉积速率，并且获得MgO单晶衬底 其可以在其上形成，例如具有优异超导性能的超导体薄膜。 钙含量为150×10 -6〜1,000×10 -6 kg / kg，硅含量为10×10 -6 kg / kg以下的MgO单晶，其中，MgO单晶的变化率为30％ 根据TOF-SIMS相对于MgO单晶的抛光表面的分析，检测到的钙碎片离子量的CV值以下。 一种MgO单晶沉积材料和用于形成由MgO单晶获得的薄膜的MgO单晶衬底。
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公开(公告)号：US06899768B2
公开(公告)日：2005-05-31
申请号：US10415168
申请日：2001-10-25
申请人： Atsuo Toutsuka , Yutaka Hiratsu
发明人： Atsuo Toutsuka , Yutaka Hiratsu
CPC分类号： C21D8/1283 , C01F5/02 , C01P2004/50 , C01P2006/14 , C01P2006/16 , H01F1/18
摘要： The present invention is related to a magnesium oxide particle aggregate with the requirement of a first inflection point diameter is more than 0.30×10−6 to 0.60×10−6 m, a particle void volume is 0.50×10−3 to 0.90×10−3 m3·kg−1, and a micropore volume is 0.04×10−3 to 0.11×10−3 m3·kg−1 in the cumulative intrusion volume curve of said particle by having controlled particle aggregation structure so that the solid phase-solid phase reaction between magnesium oxide and the SiO2 film on the surface can be appropriately controlled.
摘要翻译： 本发明涉及氧化镁颗粒聚集体，其要求第一拐点直径大于0.30×10 -6至0.60×10 -6 m，颗粒 空隙体积为0.50×10 -3至0.90×10 -3 -3 3×10 -3，以及微孔 在累积入侵体积中的体积为0.04×10 -3 -3.0×10 -3 -3 / 所述颗粒的曲线通过具有受控的颗粒聚集结构使得可以适当地控制表面上的氧化镁和SiO 2膜之间的固相 - 固相反应。
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5.发明申请公开(公告)号：US20080081767A1
公开(公告)日：2008-04-03
申请号：US11722921
申请日：2005-12-28
摘要： A magnesium oxide single crystal having controlled crystallinity comprising a subboundary, and ranges of variation of diffraction line positions, as measured for reciprocal lattice maps with respect to a region surrounded by the same subboundary, with the range of the variation of 1×10−3 to 2×10−2 degree of on Δω coordinates, and with the range of the variation of 4×10−4 to 5×10−3 degree on 2θ coordinates.
摘要翻译： 具有包含亚边界的受控结晶度的氧化镁单晶以及衍射线位置的变化范围，如相对于由相同子边界包围的区域的互逆格子图所测量的，其变化范围为1×10 -6 3倍至2倍10倍的Deltaomega坐标，并且变化范围为4×10 -4至5×10 -3 -3 2度的坐标。
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公开(公告)号：US06835250B2
公开(公告)日：2004-12-28
申请号：US10258954
申请日：2002-10-29
申请人： Yutaka Hiratsu , Toshio Kiyokawa , Atsuo Toutsuka
发明人： Yutaka Hiratsu , Toshio Kiyokawa , Atsuo Toutsuka
IPC分类号： B23K3524
CPC分类号： C01F5/02 , C01P2004/40 , C01P2004/50 , C01P2006/14 , C01P2006/16 , C21D8/1283 , H01F1/18
摘要： An object of the present invention is to provide a magnesium oxide particle aggregate having a controlled particle aggregation structure so that the solid phase-solid phase reaction between magnesium oxide and the SiO2 film on the surface can be appropriately controlled. The object can be achieved by a magnesium oxide particle aggregate characterized in that a first inflection point diameter is 0.30×10−6 m or less, an interparticle void volume is 1.40×10−3 to 2.20×10−3 m3/kg and a particle void volume is 0.55×10−3 to 0.80×10−3 m3/kg in a cumulative intrusion volume curve of the particle aggregate.
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