发明授权
- 专利标题: Method of treating a semiconductor substrate
- 专利标题(中): 处理半导体衬底的方法
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申请号: US12574543申请日: 2009-10-06
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公开(公告)号: US07749909B2公开(公告)日: 2010-07-06
- 发明人: Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
- 申请人: Hiroshi Tomita , Tatsuhiko Koide , Hisashi Okuchi , Kentaro Shimayama , Hiroyasu Iimori , Linan Ji
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2008-156708 20080616; JP2008-259636 20081006; JP2009-140992 20090612
- 主分类号: H01L21/311
- IPC分类号: H01L21/311 ; H01L21/365
摘要:
A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
公开/授权文献
- US20100075504A1 METHOD OF TREATING A SEMICONDUCTOR SUBSTRATE 公开/授权日:2010-03-25