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    APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE
    8.
    发明申请
    APPARATUS AND METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE 审中-公开
    装置和处理半导体基板表面的方法

    公开(公告)号：US20110143541A1

    公开(公告)日：2011-06-16

    申请号：US12886427

    申请日：2010-09-20

    申请人： Yoshihiro OGAWA ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

    发明人： Yoshihiro OGAWA ,  Tatsuhiko Koide ,  Shinsuke Kimura ,  Hisashi Okuchi ,  Hiroshi Tomita

    IPC分类号： H01L21/308 ,  B08B3/08 ,  B08B3/02

    CPC分类号： H01L21/0206 ,  H01L21/02043 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/67028

    摘要： In one embodiment, an apparatus of treating a surface of a semiconductor substrate comprises a substrate holding and rotating unit, first to fourth supplying units, and a removing unit. A substrate holding and rotating unit holds a semiconductor substrate, having a convex pattern formed on its surface, and rotates the semiconductor substrate. A first supplying unit supplies a chemical onto the surface of the semiconductor substrate in order to clean the semiconductor substrate. A second supplying unit supplies pure water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A third supplying unit supplies a water repellent agent to the surface of the semiconductor substrate in order to form a water repellent protective film onto the surface of the convex pattern. A fourth supplying unit supplies alcohol, which is diluted with pure water, or acid water to the surface of the semiconductor substrate in order to rinse the semiconductor substrate. A removing unit removes the water repellent protective film with the convex pattern being left.

    摘要翻译： 在一个实施例中，处理半导体衬底的表面的设备包括基板保持和旋转单元，第一至第四供电单元和去除单元。 基板保持旋转单元保持在其表面上形成有凸起图案并使半导体基板旋转的半导体基板。 第一供给单元向半导体基板的表面供给化学品，以清洁半导体基板。 第二供给单元向半导体基板的表面供给纯水，以冲洗半导体基板。 第三供给单元向半导体基板的表面供给防水剂，以在凸形图案的表面上形成防水保护膜。 为了冲洗半导体衬底，第四供应单元将用纯水或酸性水稀释的酒精提供给半导体衬底的表面。 去除单元除去留下凸起图案的防水保护膜。

    SUPERCRITICAL DRYING METHOD AND SUPERCRITICAL DRYING APPARATUS
    9.
    发明申请
    SUPERCRITICAL DRYING METHOD AND SUPERCRITICAL DRYING APPARATUS 审中-公开
    超临界干燥方法和超临界干燥装置

    公开(公告)号：US20110220152A1

    公开(公告)日：2011-09-15

    申请号：US12963952

    申请日：2010-12-09

    申请人： Yukiko KITAJIMA ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Tatsuhiko Koide

    发明人： Yukiko KITAJIMA ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Tatsuhiko Koide

    IPC分类号： B08B3/00 ,  F26B21/00

    CPC分类号： F26B3/00 ,  H01L21/67028 ,  H01L21/67034

    摘要： According to one embodiment, a substrate having a plurality of adjacent patterns on one surface thereof is cleaned by cleaning liquid. Subsequently, after the cleaning liquid is displaced with pure water, the pure water is displaced with displacement liquid. Under a condition that the displacement liquid among the patterns does not vaporize, the displacement liquid not contributing to prevention of collapse of the patterns is removed. After the displacement liquid is removed, the substrate is held in supercritical fluid and the displacement liquid among the patterns is displaced with the supercritical fluid. After the displacement liquid among the patterns is displaced with the supercritical fluid, the supercritical fluid adhering to the substrate is vaporized.

    摘要翻译： 根据一个实施例，在其一个表面上具有多个相邻图案的基板通过清洗液体被清洁。 随后，在用纯水置换清洗液之后，用置换液体移动纯水。 在图案中的位移液不会蒸发的条件下，不利于防止图案塌陷的位移液被去除。 在取出置换液后，将基板保持在超临界流体中，并且图案中的置换液体与超临界流体一起移位。 在图案中的位移液体被超临界流体置换之后，附着在基板上的超临界流体被蒸发。

    Semiconductor substrate surface treatment method
    10.
    发明授权
    Semiconductor substrate surface treatment method 有权
    半导体衬底表面处理方法

    公开(公告)号：US08435903B2

    公开(公告)日：2013-05-07

    申请号：US13069164

    申请日：2011-03-22

    申请人： Yoshihiro Ogawa ,  Shinsuke Kimura ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Hiroshi Tomita

    发明人： Yoshihiro Ogawa ,  Shinsuke Kimura ,  Tatsuhiko Koide ,  Hisashi Okuchi ,  Hiroshi Tomita

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/0206 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/67028 ,  H01L27/11531

    摘要： In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.

    摘要翻译： 在一个实施例中，公开了一种用于处理半导体衬底的表面的方法。 半导体衬底具有由抗蚀剂覆盖的第一图案和未被抗蚀剂覆盖的第二图案。 该方法包括将抗蚀剂不溶的第一化学溶液提供到半导体衬底上以使第二图案进行化学溶液处理。 该方法包括：在供给第一化学溶液之后，在半导体衬底上提供防水剂和可溶解抗蚀剂的第二化学溶液的混合液体，在至少第二图案的表面上形成防水保护膜 并释放抗蚀剂。 此外，该方法可以在形成防水保护膜之后用水冲洗半导体衬底，并干燥冲洗后的半导体衬底。