发明授权
- 专利标题： Semiconductor device and fabrication method thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US11743189申请日： 2007-05-02
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公开(公告)号： US07804142B2公开(公告)日： 2010-09-28
- 发明人: Shunpei Yamazaki , Hideomi Suzawa , Koji Ono , Yoshihiro Kusuyama
- 申请人： Shunpei Yamazaki , Hideomi Suzawa , Koji Ono , Yoshihiro Kusuyama
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2001-091275 20010327
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.
公开/授权文献
- US20070194315A1 Semiconductor Device and Fabrication Method Thereof 公开/授权日：2007-08-23
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