发明授权
- 专利标题： Surface treatment of inter-layer dielectric
- 专利标题（中）： 层间电介质的表面处理
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申请号： US11308422申请日： 2006-03-23
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公开(公告)号： US07816253B2公开(公告)日： 2010-10-19
- 发明人: Shyng-Tsong Chen , Qinghuang Lin , Kelly Malone , Sanjay Mehta , Terry A. Spooner , Chih-Chao Yang
- 申请人： Shyng-Tsong Chen , Qinghuang Lin , Kelly Malone , Sanjay Mehta , Terry A. Spooner , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Yuanmin Cai
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/425 ; H01L21/4763
摘要：
When an interconnect structure is built on porous ultra low k (ULK) material, the bottom of the trench and/or via is usually damaged by a following metallization process which may be suitable for dense higher dielectric materials. Embodiment of the present invention may provide a method of forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes steps of treating an exposed area of said ILD material to create a densified area, and metallizing said densified area.
公开/授权文献
- US20070222081A1 SURFACE TREATMENT OF INTER-LAYER DIELECTRIC 公开/授权日：2007-09-27
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