发明授权
- 专利标题: Methods of forming a semiconductor device including a diffusion barrier film
- 专利标题(中): 形成包括扩散阻挡膜的半导体器件的方法
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申请号: US12112135申请日: 2008-04-30
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公开(公告)号: US07816255B2公开(公告)日: 2010-10-19
- 发明人: Kyung-In Choi , Gil-Heyun Choi , Hyun-Bae Lee , Jong-Won Hong , Jong-Myeong Lee
- 申请人: Kyung-In Choi , Gil-Heyun Choi , Hyun-Bae Lee , Jong-Won Hong , Jong-Myeong Lee
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR2007-0043153 20070503
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L23/48
摘要:
Methods of forming a semiconductor device that includes a diffusion barrier film are provided. The diffusion barrier film includes a metal nitride formed by using a MOCVD process and partially treated with a plasma treatment. Thus, a specific resistance of the diffusion barrier film can be decreased, and the diffusion barrier film may have distinguished barrier characteristics.