发明授权
US07883739B2 Method for strengthening adhesion between dielectric layers formed adjacent to metal layers
有权
用于加强与金属层相邻形成的介电层之间的附着力的方法
- 专利标题: Method for strengthening adhesion between dielectric layers formed adjacent to metal layers
- 专利标题(中): 用于加强与金属层相邻形成的介电层之间的附着力的方法
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申请号: US10462343申请日: 2003-06-16
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公开(公告)号: US07883739B2公开(公告)日: 2011-02-08
- 发明人: Igor C. Ivanov , Weiguo Zhang , Artur Kolics
- 申请人: Igor C. Ivanov , Weiguo Zhang , Artur Kolics
- 申请人地址: US CA Fremont
- 专利权人: Lam Research Corporation
- 当前专利权人: Lam Research Corporation
- 当前专利权人地址: US CA Fremont
- 代理机构: Daffer McDaniel, LLP
- 代理商 Kevin L. Daffer; Mollie E. Lettang
- 主分类号: B05D5/12
- IPC分类号: B05D5/12 ; H01L21/4763
摘要:
A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.