Invention Grant
- Patent Title: Method of fabricating a precision buried resistor
- Patent Title (中): 制造精密埋电阻的方法
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Application No.: US11276282Application Date: 2006-02-22
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Publication No.: US07910450B2Publication Date: 2011-03-22
- Inventor: Anil K. Chinthakindi , Douglas D. Coolbaugh , Keith E. Downes , Ebenezer E. Eshun , John E. Florkey , Heidi L. Greer , Robert M. Rassel , Anthony K. Stamper , Kunal Vaed
- Applicant: Anil K. Chinthakindi , Douglas D. Coolbaugh , Keith E. Downes , Ebenezer E. Eshun , John E. Florkey , Heidi L. Greer , Robert M. Rassel , Anthony K. Stamper , Kunal Vaed
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent David Cain, Esq.
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
The present invention provides a semiconductor structure including a buried resistor with improved control, in which the resistor is fabricated in a region of a semiconductor substrate beneath a well region that is also present in the substrate. In accordance with the present invention, the inventive structure includes a semiconductor substrate containing at least a well region; and a buried resistor located in a region of the semiconductor substrate that is beneath said well region. The present invention also provides a method of fabricating such a structure in which a deep ion implantation process is used to form the buried resistor and a shallower ion implantation process is used in forming the well region.
Public/Granted literature
- US20070194390A1 METHOD OF FABRICATING A PRECISION BURIED RESISTOR Public/Granted day:2007-08-23
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